| AVS 55th International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Aspects of Thin Films |
| Presenter: | J.C. Rowland, University of Florida |
| Authors: | J.C. Rowland, University of Florida M. Davidson, University of Florida P.H. Holloway, University of Florida J. Jones, University of Florida |
| Correspondent: | Click to Email |
Multilayer thin films consisting of alternating layers of amorphous Al2O3 and Y2O3 were prepared using Tris(2,2,6,6,-tetramethyl-3,5-heptanedionato)yttrium(III), AlCl3, H2O, and O3 as precursors in an atomic layer deposition system with a substrate temperature during growth of 500oC. The thicknesses of each layer ranged from 0.5-10nm depending on the number of precursor pulses with a resulting multilayer stack thickness of 10-100nm. Time-resolved X-ray diffraction spectra were taken as a function of annealing temperature from 20oC to 1200oC. Results above 500oC show crystallization of the amorphous films into mixed phases of Al2O3, Y2O3, Y4Al2O9 (monoclinic), and YAlO3 (perovskite type). The resulting microstructure shows a dependence on the anneal temperature and thickness of the individual as-deposited Al2O3 and Y2O3 films. Optical and electrical properties of the films are correlated with the growth and processing conditions.