AVS 55th International Symposium & Exhibition
    Thin Film Thursday Sessions
       Session TF-ThP

Paper TF-ThP18
Integrated UHV/ALD Reactor for Growth of Oxide Materials

Thursday, October 23, 2008, 6:00 pm, Room Hall D

Session: Aspects of Thin Films
Presenter: K. Pradhan, University of Wisconsin-Milwaukee
Authors: K. Pradhan, University of Wisconsin-Milwaukee
A.E. Wierzbinski, University of Wisconsin-Milwaukee
P.F. Lyman, University of Wisconsin-Milwaukee
Correspondent: Click to Email

We have constructed a novel chemical reactor for controlled growth of crystalline oxide layered structures using Atomic Layer Deposition. The instrument operates in the viscous flow regime, and the design is based heavily upon that of Elam, Groner, and George.1 However, we have interfaced this reactor to an existing UHV analytical chamber. The combination allows us to investigate not only the as-grown films, but also to study, on an atomic scale, the intermediate reaction sequences. Moreover, we can use established UHV techniques to prepare a well-defined starting surface for subsequent growth, and are able to modify the substrate at arbitrary points in the growth sequence. Initial results on the growth of ZnO films will be reported.

1 J.W. Elam, M.D. Groner, and S.M. George, Rev. Sci. Instrum. 73, 2981-2987 (2002).