AVS 55th International Symposium & Exhibition | |
Thin Film | Thursday Sessions |
Session TF-ThP |
Session: | Aspects of Thin Films |
Presenter: | A. Hande, The University of Texas at Dallas |
Authors: | A. Hande, The University of Texas at Dallas B. Lee, The University of Texas at Dallas H.C. Kim, The University of Texas at Dallas R.M. Wallace, The University of Texas at Dallas J. Kim, The University of Texas at Dallas X. Liu, Rohm and Haas Electronic Materials, LLC. M. Rousseau, Rohm and Haas Electronic Materials, LLC. J. Yi, Rohm and Haas Electronic Materials, LLC. D.V. Shenai, Rohm and Haas Electronic Materials, LLC. J. Suydam, Rohm and Haas Electronic Materials, LLC. |
Correspondent: | Click to Email |
Lanthanum oxide (La2O3) is gaining importance as one of the promising high-k candidates due to its superior properties such as a high dielectric constant (~27), large band gap and high electrical breakdown field strength. However, the hygroscopic properties of La2O3 leads to the formation of lanthanum hydroxide (La(OH)3) which causes deterioration of electrical properties such as, permittivity. Additionally, several studies have reported that a La based CVD process result in a high C concentration in the deposited films. In order to overcome these issues, we investigate two different processes; one is alternating layers of La2O3 and Al2O3 to form nano-laminate (LaxAlyO3) structures and the other is employing ozone as the oxidant. In this study, we deposited LaxAlyO3 films using atomic layer deposition (ALD) on H-terminated p-type Si (100) substrate using tris(N,N’-diisopropylformamidinato) lanthanum, La(iPrfAMD)3 as the La precursor while water and ozone employing as the oxidant. The physical properties of the deposited La-oxide using various characterization techniques such as HR-TEM, XPS, and XRD as well as electrical characteristics will be presented. Particularly, our in-situ XPS half-cycle study provides an insight on chemical composition modulation based on different process sequence. Acknowledgement: Rohm and Haas Electronic Materials, LLC. for financial support and Toshiba Mitsbushi Electric Industrial Systems Corporation (TEMIC) for providing a ozone generator (OP-H250 LT) for a high concentration ozone.