| AVS 55th International Symposium & Exhibition | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Aspects of Thin Films |
| Presenter: | S.U. Lee, Sungkyunkwan University, Korea |
| Authors: | S.U. Lee, Sungkyunkwan University, Korea W.S. Choi, Hanbat National University, Korea H.J. Kim, Sungkyunkwan University, Korea B. Hong, Sungkyunkwan University, Korea |
| Correspondent: | Click to Email |
Antimony-doped tin oxide (ATO) films were prepared on a 7059 Corning glass substrate by the radio frequency (RF) magnetron sputtering method using a SnO2 target mixed with Sb of 6 wt% at room temperature. The working pressure was varied from 5 to 15 mTorr in steps of 5 mTorr, and the RF power was varied from 100 to 175 W in step of 25 W at room temperature. The thickness of the deposited ATO films was about 150 nm ± 10. X-ray diffraction (XRD) measurements showed ATO films to be crystallized with a strong (101) preferred orientation as the RF power increased. The spectra revealed that the deposited films were polycrystalline and they retained the tetragonal structure. The grain size, which was 23.2 nm, was calculated from the XRD spectra using the Scherrer equation. ATO film deposited at a working pressure of 5 mTorr and RF power of 175 W showed the lowest resistivity of 8.6 x 10^-3 ohm.cm and the optical transmittance was 86.5 % in the visible range.