|AVS 55th International Symposium & Exhibition|
|Thin Film||Thursday Sessions|
|Session:||Thin Films for Displays and Flexible Electronics|
|Presenter:||Q.H. Fan, Wintek Electro-Optics Corp|
|Authors:||Q.H. Fan, Wintek Electro-Optics Corp
L.Q. Zhou, University of Michigan
D. Stevenson, Wintek Electro-Optics Corp.
|Correspondent:||Click to Email|
Silicon oxide thin films are widely used in flat panel displays as well as optical and large area architectural type coatings. Two sputtering techniques are commonly used to deposit silicon oxide thin films. For the highest density SiO2 films RF sputtering using quartz targets is normally preferred. For large area coating at high rates reactive sputtering using silicon targets and either DC or AC type power supplies is the most common method. RF sputtering results in high quality films but relatively low deposition rates. Reactive sputtering from silicon targets has higher deposition rates but lower film quality. In addition reactive sputtering using planar targets has process stability issues due to target poisoning. The ideal process would combine the high rates of reactive sputtering with the film quality of RF sputtered SiO2 films from quartz targets. We have successfully developed a conductive SiO2:Si target (patent pending) that achieves this goal. This target composition can be sputtered using DC, AC or RF power supplies. Using this new target it is possible to reach deposition rates that are at least three times higher than typical RF sputtered SiO2 films from quartz targets. Further, the SiO2 film quality that can be achieved is comparable to RF sputtered films from quartz targets. In this paper, we present details of the conductive SiO2:Si target as well as the resulting SiO2 film properties and deposition rates that have been achieved. In addition we also provide our preliminary analysis of the deposition process mechanism that enables such high deposition rates and film quality when SiO2:Si targets are used.