AVS 55th International Symposium & Exhibition
    Thin Film Monday Sessions
       Session TF-MoA

Paper TF-MoA7
New Barium, Strontium, and Titanium Precursors for the Deposition of Barium/Strontium-containing and Titanium Nitride Thin Films

Monday, October 20, 2008, 4:00 pm, Room 302

Session: ALD: Functionalization and Surface Chemistry
Presenter: Q.M. Wang, Rohm and Haas Electronic Materials LLC
Authors: Q.M. Wang, Rohm and Haas Electronic Materials LLC
D.V. Shenai, Rohm and Haas Electronic Materials LLC
R.G. Gordon, Harvard University
Correspondent: Click to Email

Atomic Layer Deposition (ALD) is a technology gaining recognition in the semiconductor industry because of its exceptional benefits: an extremely precise thickness control, a very good composition control, an excellent conformality over aggressive geometries, and a wide deposition temperature window. As a result, numerous ALD-based processes are currently being developed for depositing a wide variety of metals and dielectrics for high-k gate dielectrics, metal gate/capacitor electrodes, barrier metals, seed layers, and ferroelectric films. Identification of suitable precursors has often been one of the challenges and critical success factors in ALD process development. The thermal stability and vapor pressure of the sources play a significant role in the stringent selection criteria along with a high reactivity with the second reactant in a wide temperature window, an acceptable shelf-life, and an ultra-high purity. For the ALD of high-k dielectrics, metal halides were adopted early on as the precursors of choice, which were later replaced by metalorganic sources with metal-nitrogen bonds such as metal dialkylamides and more recently developed metal amidinates. The metal amidinate sources have produced excellent results in the deposition of many thin film materials. In this study, we report the synthesis of new dialkylamidinate precursors for barium, strontium and titanium. These amidinate complexes display high thermal stabilities, acceptable vapor pressures and promise to be superior sources for deposition of barium/strontium-containing titanate, niobate, or tantalate thin films, as well as titanium nitride films by ALD. Volatility and thermal stability data for the barium, strontium and titanium amidinate complexes will be discussed. The barium and strontium amidinates are dimeric crystalline materials. The new titanium(III) amidinate is a low-melting material that greatly facilitates its handling in bubblers, while the titanium(IV) amidinate is a dimeric crystalline material. Data showing the high purity of the amidinate sources will be demonstrated by ICP-MS and FT-NMR analysis, and data characterizing their thermal stabilities will be provided from TGA/DSC and FT-NMR analysis. Preliminary deposition results of barium titanate, strontium titanate, and barium-strontium titanate thin films with these amidinate precursors will be provided.