| AVS 55th International Symposium & Exhibition | |
| Surface Science | Thursday Sessions |
| Session SS1-ThM |
| Session: | Growth and Etching on Surfaces |
| Presenter: | H. Fairbrother, Johns Hopkins University |
| Authors: | H. Fairbrother, Johns Hopkins University J.M. Gorham, Johns Hopkins University J.D. Wnuk, Johns Hopkins University |
| Correspondent: | Click to Email |
Nitrogen doped carbonaceous films have attracted intense experimental and theoretical interest due to the beneficial effects that nitrogen incorporation has on the wear resistance, adhesion characteristics and optical/electronic properties of amorphous carbonaceous films. Motivated by a desire (i) to understand the structure of amorphous carbon nitride films deposited by electron beam induced deposition (EBID) and (ii) to better understand the role that electrons play in moderating the microstructure and film growth of plasma deposited nitrogen doped carbonaceous films, we have studied the deposition of amorphous carbon nitride films from a 1,2-diaminopropane precursor molecule exposed to low energy (< 5keV) electrons. Our experimental approach involved initially depositing nanometer-scaled thin films of the precursor at low temperatures under ultra-high vacuum (UHV) conditions. The influence of electron irradiation on the chemical composition and bonding within the deposited film was then probed using reflection absorption infrared spectroscopy (RAIRS) in combination with x-ray photoelectron spectroscopy (XPS), while complementary data of the gas phase species evolved during electron irradiation were studied with mass spectrometry (MS). The electron stimulated decomposition of adsorbed 1,2-diaminopropane proceeded with the loss of both C-H and N-H bonds and the formation of an amorphous carbon nitride film. Upon more prolonged electron beam irradiation, nitrile (C≡N) species were formed. This observation suggests that electrons may play an important role in moderating the chemical structure of plasma deposited carbon nitride films. Hydrogen was the principal gas phase product evolved during film deposition. The loss of C-H and N-H bonds from the film, as well as the hydrogen evolution, were modeled by a first-order kinetic process with a rate constant that increases linearly with electron fluence. This information obtained under UHV conditions will also be compared with data obtained from the growth kinetics and structure of amorphous carbon nitride films grown using EBID of vapor phase 1,2-diaminopropane, studied using a combination of auger electron spectroscopy and atomic force microscopy. Results will also be presented on the role that the incident electron energy and the substrate exert in determining reaction rates and growth kinetics.