| AVS 55th International Symposium & Exhibition | |
| Surface Science | Friday Sessions |
| Session SS+EM+NC-FrM |
| Session: | Semiconductor Surfaces |
| Presenter: | Y.J. Song, University of Maryland, College Park and NIST |
| Authors: | Y.J. Song, University of Maryland, College Park and NIST G.M. Rutter, Georgia Institute of Technology P.N. First, Georgia Institute of Technology N. Zhitenev, National Institute of Standards and Technology J.A. Stroscio, National Institute of Standards and Technology |
| Correspondent: | Click to Email |
Increased interest in spin-based electronics as a replacement for charge-based electronics has led to significant scientific attention to dilute magnetic semiconductors (DMS). One of the main dilute magnetic semiconductors involves doping III-V semiconductors with Mn acceptors with the aim of achieving high Curie temperatures. In the present work, we studied Mn deposited on the InAs(110) surface with low temperature scanning tunneling microscopy and spectroscopy (STM/STS). Single Mn atoms were deposited onto a cleaved n-InAs(110) surface at cryogenic temperatures. The as-deposited Mn adatoms were found to be in two distinct configurations. About 10% of the Mn adatoms appear in the topographic images to be positively charged. The other 90% appear to be in a neutral configuration. Both types of adatoms can undergo an exchange process whereby the surface Mn atom substitutes for an In atom in the top surface layer. This process involves raising the sample tunneling voltage beyond a certain threshold voltage of approximately -0.6 eV for both types of Mn adatoms. This process is similar to that seen in the Mn/GaAs system.1 And we also studied that in-situ deposition of Mn onto a cleaved n-doped InAs(110) substrate at low temperature produces an adsorbate-induced 2DEG at the InAs surface. Spatial properties of Landau level quantization2 in high magnetic fields of both the 2D sub-bands and 3D conduction bands were studied in relation to the configuration of Mn atoms on the surface.
1 D. Kitchen et al, Nature 442, 436 (2006)
2 M. Morgestern et al, Phys. Rev. Lett. 90, 56804 (2003).