| AVS 55th International Symposium & Exhibition | |
| Advanced Surface Engineering | Thursday Sessions |
| Session SE+TF+NC-ThM |
| Session: | Glancing Angle Deposition (GLAD) I |
| Presenter: | M. Suzuki, Kyoto University, Japan |
| Authors: | M. Suzuki, Kyoto University, Japan R. Kita, Kyoto University, Japan K. Hamachi, Kyoto University, Japan K. Nakajima, Kyoto University, Japan K. Kimura, Kyoto University, Japan |
| Correspondent: | Click to Email |
Recently, we have found that peculiar metal (Al, Fe, Ag, Au etc.) nanowhiskers grow when metal is deposited at a glancing angle on a high-temperature substrate (HT-GLAD). The key factors for producing nanowhiskers are a glancing deposition angle larger than 80° and a temperature higher than almost half of the melting point of the metal. Since the growth of the nanowhiskers may be concerned with the general crystal growth mechanisms, an understanding of the growth mechanisms will provide a novel technique to fabricate nanostructures. Further, if the growth of nanowhiskers is controlled, metal nanowhiskers will become important components for nanoelectromechanical devices because of their mechanical compliance, high electric and thermal conductance, catalysis, plasmonic properties, magnetism, etc. In order to understand the effect of the detailed geometric deposition condition on the growth of nanowiskers, we have demonstrated HT-GLAD of Al on a heated substrate with trench patterns. Al was deposited on a surface-oxidized Si(110) substrate using an electron beam (EB) evaporation apparatus specially designed for HT-GLAD. Six groups of trenches with a nominal width of 1, 3, 5, 10, 15, and 20 μm, respectively, and a depth of 1.7 μm were prepatterned along the direction. The substrate temperature during the deposition was maintained constant at a temperature of 390 °C. By choosing an appropriate substrate attitude during the deposition, the deposition angle on the sidewalls of the trenches was kept constant at 85°, while that on the surface was varied between 55° and 87°. The amount of Al deposited on the sidewalls was 30 nm in average thickness for all samples. The number of nanowhiskers growing on the sidewalls significantly increased with deposition angle on the surface. This suggests that Al atoms deposited in front of the growing nanowhiskers play an important role in the growth of nanowhiskers. The directive migration and/or reflective scattering are possible candidates for the transport process of the deposited atoms.