AVS 55th International Symposium & Exhibition
    Nanometer-scale Science and Technology Thursday Sessions
       Session NS+NC-ThM

Paper NS+NC-ThM2
FIB Induced Self-Assembly of InAs Quantum Dots

Thursday, October 23, 2008, 8:20 am, Room 311

Session: Nanoscale Assembly
Presenter: M.J. Noordhoek, University of Michigan - Ann Arbor
Authors: M.J. Noordhoek, University of Michigan - Ann Arbor
J.Y. Lee, University of Michigan - Ann Arbor
H. Mckay, University of Michigan - Ann Arbor
A. Dehne, University of Michigan - Ann Arbor
P. Rudzinski, University of Michigan - Ann Arbor
J.M. Millunchick, University of Michigan - Ann Arbor
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The use of various patterning techniques for self-assembly of highly regular and dense quantum dot arrays are being pursued for applications in opto-electronics and quantum computing. In this work, we use a novel in-vacuo focused ion beam and growth system to pattern an array of holes on GaAs for subsequent deposition of InAs quantum dots. Exposure of GaAs(001) substrates to a 30keV 10pA beam of Ga+ ions as a function of pitch 140