Invited Paper NS+NC-ThM11
Insertion of Block Copolymers Into the Lithographic Process

Thursday, October 23, 2008, 11:20 am, Room 311

Self-assembling materials spontaneously form structures with well-defined dimensions and shapes at length scales of interest in nanotechnology. In the particular case of block copolymer materials, the thermodynamic driving forces for self-assembly are small and low-energy defects can get easily trapped. At issue is the extent of direction or guidance required to meet criteria related to perfection and registration for use of such materials in nanofabrication. We explore and develop new materials and processes for advanced lithography in which self-assembling block copolymers are integrated into and advance the performance of the patterning process for semiconductor manufacturing and data storage applications. Through fundamental understanding of the physics and chemistry of interfacial phenomena associated with equilibrating block copolymer films in the presence of lithographically defined chemically nanopatterned substrates, we synthesize and assemble materials to enable fabrication at length scales (3-20 nm) currently not possible. Essential attributes of existing manufacturing practices must be retained, including pattern perfection, registration and overlay, and the ability to pattern device-oriented geometries, but with additional qualities including resolution enhancement and precise control over the shapes and dimensions of patterned features.