| AVS 55th International Symposium & Exhibition | |
| Nanometer-scale Science and Technology | Thursday Sessions |
| Session NS+NC-ThA |
| Session: | Nanolithography and Manipulation |
| Presenter: | H.J. Kim, Sungkyunkwan University, Korea |
| Authors: | H.J. Kim, Sungkyunkwan University, Korea Y. Roh, Sungkyunkwan University, Korea B. Hong, Sungkyunkwan University, Korea |
| Correspondent: | Click to Email |
The nanowires using the conjugation of DNA and metal (e.g., Ag, Au, Cu and Pd) are essential building blocks to realize the nanometer-scaled electronic devices and are being extensively investigated to apply to nano-scale electronic devices. However, there are remaining some problems for realization of DNA device such as fixing on specific location and aligning with uniform interval. We report an approach to selectively align and uniformly separate λ-DNA molecules and thus DNA-templaed gold nanowires (AuNWs) on SiO2 surface using surface-patterning technique by combination of self-assembly and conventional microfabrication processes. We also utilized the photolithography and plasma ashing methods to create molecular patterns comprised nano-scale patterned 3-(aminopropyl)triethoxysilane (APS) region and micron-scale octadecyltrichlorosilane (OTS) region that the key for highly selective assembly is the high-quality molecular layers. DNA was attached only on the APS region defined by the amine groups, but not on the surface of the OTS region. By surface-pattering technique, we could obtain DNA molecules and thus DNA-based AuNWs aligned parallel and selectively at 10 µm intervals on a Si substrate. We used atomic force microscopy (AFM) to analyze the configuration of AuNWs.
surface-pattering technique, plasma ashing, λ-DNA molecule, gold nanowires (AuNWs), APS, and OTS.