| AVS 55th International Symposium & Exhibition | |
| Nanomanufacturing Focus Topic | Thursday Sessions |
| Session NM+EM+PS+NS+NC-ThM |
| Session: | Printable Lithography and Processing |
| Presenter: | J. Chiaroni, Minatec/Cea-Leti, France |
| Authors: | J. Chiaroni, Minatec/Cea-Leti, France Y. Le Cunff, Minatec/Cea-Leti, France C. Charpin, Minatec/Cea-Leti, France M.P. Clement, St Microelect., France H. Denis, Minatec/Cea-Leti, France G. Medico, St Microelect., France M.L. Villani, St Microelect., France N. Rochat, Minatec/Cea-Leti, France A. Fanton, Minatec/Cea-Leti, France L. Lachal, Minatec/Cea-Leti, France P. Brianceau, Minatec/Cea-Leti, France S. Barnola, Minatec/Cea-Leti, France F. Perrin, Minatec/Cea-Leti, France E. Vermande, Minatec/Cea-Leti, France P. Lavios, Minatec/Cea-Leti, France N. Khusnatdinov, Molecular Imprint Inc. D. Labrake, Molecular Imprint Inc. J.P. Gouy, Minatec/Cea-Leti, France P. Gubbini, Molecular Imprint Inc. |
| Correspondent: | Click to Email |
Nano-Imprint Lithography (NIL) is one of the most promising candidates (ITRS road map 2007) to address the 32 nm node and below thanks to a high resolution capability (templates are manufactured with E-Beam Lithography), a compatibility with CMOS technology and a lower COO as a simpler technology. The method is based on stamping out patterns on a specific polymer and then transferring into the underneath materials. SFIL/R® is an innovative NIL technology proposed by Molecular Imprint Inc, which uses a stack of three materials: 1. TranSpinTM for initial planarization; 2. MonoMatTM in which pattern is printed; 3. SilSpinTM which planarizes MonoMatTM material. Then, two specific dry etching processes are required to generate the polymer mask: 1. Imprint features opening (SilSpinTM dry etch back with stop on MonoMatTM); 2. Polymers mask opening (TranSpinTM and MonoMatTM dry etching with high selectivity on SilSpinTM Hard Mask and CD control). One of the main challenges is to obtain a good etching selectivity between these three materials which are polymer based and very similar one to the other. SilSpinTM characterization has been performed with XPS and SIMS analysis in order to determine etching orientation. According to these results, imprint features opening was achieved with fluorinated chemistry (CHF3/O2/Ar) and Polymer mask opening with HBr/O2 or Cl2/O2 based chemistry. Study of plasma impact on SilSpinTM with XPS and FTIR analysis has shown a clear impact of chlorine due to its higher efficiency to break SilSpinTM characteristic bonding. So, HBr/O2 plasma has been preferred to perform the polymer mask opening. A Design Of Experiments was achieved with HBr/O2 based chemistry in order to determine the most effective input parameters and get the optimized selectivities. By adjusting HBr/O2 ratio and bias power, a selectivity of seven was obtained between SilSpinTM and pure organic materials, which is consider as high enough. Then, Vias and Lines applications were studied with cross section SEM and CD bias measurement. This work has been carried out within the frame of European program MEDEA+ 2T305 “«Fantastic».