AVS 55th International Symposium & Exhibition
    Nanomanufacturing Focus Topic Thursday Sessions
       Session NM+EM+PS+NS+NC-ThM

Invited Paper NM+EM+PS+NS+NC-ThM1
Techniques for Three Dimensional and Molecular Scale Nanofabrication

Thursday, October 23, 2008, 8:00 am, Room 309

Session: Printable Lithography and Processing
Presenter: D. Shir, University of Illinois, Urbana-Champaign
Authors: J. Rogers, University of Illinois, Urbana-Champaign
D. Shir, University of Illinois, Urbana-Champaign
Correspondent: Click to Email

Progress in nanoscience and technology relies critically on the ability to build structures with nanometer dimensions. This talk describes unconventional lithographic methods based on (i) advanced forms of soft nanoimprint lithography for 2D patterning with resolution that extends to molecular (~1 nm) length scales, and (ii) conformable phase mask optics for single step formation of fully three dimensional (3D) nanostructures. The first method relies on optimized polymers for molds and mold materials that, together, enable lithographic fidelity at the ~1-2 nm scale, as demonstrated by the replication of relief structures defined by individual single walled carbon nanotubes with diameters down to ~0.7 nm. The use of this method to form alignment layers for liquid crystal devices illustrates a realistic application and a simple example of the broader notion of molded molecular structures for chemical and biological surface recognition. The second method exploits an unusual class of optical element – an elastomeric, sub-wavelength phase mask – in a contact mode exposure geometry to generate 3D structures in photopolymers and other materials in a single patterning step. Aspects such as the self-imaging, Talbot effect optics of this approach, its capabilities for creating periodic, aperiodic and quasi-crystalline 3D nanostructures and selected applications in microfluidics, laser fusion targets and photonic crystals will be discussed. This work was supported by the NSF and the Department of Energy.