| AVS 55th International Symposium & Exhibition | |
| Graphene Topical Conference | Tuesday Sessions |
| Session GR+EM+NC-TuM |
| Session: | Graphene and Carbon Electronics |
| Presenter: | M. Sprinkle, Georgia Institute of Technology |
| Authors: | M. Sprinkle, Georgia Institute of Technology F. Ming, Georgia Institute of Technology D. Martinotti, CEA Saclay, France P.G. Soukiassian, Université de Paris-Sud/Orsay and CEA Saclay, France C. Berger, Georgia Institute of Technology E.H. Conrad, Georgia Institute of Technology W.A. de Heer, Georgia Institute of Technology |
| Correspondent: | Click to Email |
Multi-layer graphene grown epitaxially on the C-terminated (000-1) surface of 4H-SiC in a high vacuum (~10-5 Torr), high temperature (~1420 °C) induction furnace environment has been shown to be of extremely high quality1,2 and mobility.3,4 Though multi-layered, the material exhibits electronic properties similar to those of isolated graphene.1,3,4,5 Here, we characterize the material by atomic force microscopy (AFM), low energy electron microscopy (LEEM), and ellipsometry, and gain insight into growth mechanisms, highlighting growth on 4H-SiC(000-1) in comparison to 4H-SiC(0001), 6H-SiC(000-1), and 6H-SiC(0001). AFM and LEEM images demonstrate µm-scale graphene terraces. Ellipsometry and LEEM data show that graphene thickness is quite uniform over mm and µm scales.
1 J. Hass et al., Phys. Rev. Lett. 100, 125504 (2008).
2 J. Hass et al., J. Phys. Cond. Matt. 80, (in press)
3 C. Berger et al., Science 3012, 1191 (2006).
4 W. A. de Heer et al., Solid State Comm. 143, 92-100 (2007).
5 M. Sadowski et al., Phys. Rev. Lett. 97, 266405 (2006).