| AVS 55th International Symposium & Exhibition | |
| Graphene Topical Conference | Tuesday Sessions |
| Session GR+EM+NC-TuM |
| Session: | Graphene and Carbon Electronics |
| Presenter: | B. Lee, The University of Texas at Dallas |
| Authors: | B. Lee, The University of Texas at Dallas S.Y. Park, The University of Texas at Dallas H.Y. Kim, The University of Texas at Dallas K.J. Cho, The University of Texas at Dallas E.M. Vogel, The University of Texas at Dallas M.J. Kim, The University of Texas at Dallas R.M. Wallace, The University of Texas at Dallas J. Kim, The University of Texas at Dallas |
| Correspondent: | Click to Email |
To make use of top-gated graphene devices, uniform and thin dielectrics on top of graphene is required. However, the chemically inert nature of graphene basal planes inhibits deposition of high quality and atomically uniform gate dielectric films. Here, we present characteristics of dielectrics employed by atomic layer deposition on top of a highly oriented pyrolytic graphite (HOPG) surface for localized gate applications. It was found that TMA/H2O process shows selective deposition of Al2O3 only along with step edges which have high chemical reactivity. Therefore, it is critical to provide uniform and dense nucleation sites on the basal plane in order to achieve conformal deposition of dielectric. In this presentation, we will demonstrate a facile route providing atomically smooth and uniform Al2O3 layers on top of a HOPG by atomic layer deposition (ALD). The physical properties of the deposited Al2O3 layer will be also studied using various characterization techniques including HR-TEM, XPS, and AFM. Acknowledgements: We acknowledge financial supports by KETI through the international collaboration program of COSAR (funded by MKE in Korea) and the SWAN program funded by the GRC-NRI.