| AVS 55th International Symposium & Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | W.-C. Chen, National Applied Research Laboratories, Taiwan |
| Authors: | W.-C. Chen, National Applied Research Laboratories, Taiwan S.-Y. Kuo, Chang Gung University, Taiwan H.-C. Pan, Gintech Energy Corporation, Taiwan F.-I. Lai, Yuan Ze University, Taiwan C.-N. Hsiao, National Applied Research Laboratories, Taiwan |
| Correspondent: | Click to Email |
In this paper, wurtzite structure Indium nitride films on TCO layer was examined. InN films were grown on highly-quality of TCO buffer layer by UHV-plasma assisted metal-organic molecule beam epitaxy system. We have studied influence of to growth temperature by their structure, surface morphology and optical properties. The InN films has been characterized in detail using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Transmittance electron microscopy(TEM),Hall effect. The surface roughness was obtained from SEM measurements with increased growth temperature. Furthermore, a pronounced two-dimensional growth mode was observed at the growth temperature of 500 ℃, and InN films highly oriented to the c-axis were obtained by optimizing growth conditions in the direct growth on TCO buffer layer. TEM images show these InN films are single phase wurtzite crystals with preferred orientation along the c axis. Our results indicated that the growth temperatures of 500-550 ℃ were beat to achieve high quality InN films.