AVS 55th International Symposium & Exhibition
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP5
Properties of Mn Doped ZnO Hollow Nanosphere Structures

Thursday, October 23, 2008, 6:00 pm, Room Hall D

Session: Electronic Materials and Processing Poster Session
Presenter: D.-R. Liu, National Applied Research Laboratories, Taiwan
Authors: D.-R. Liu, National Applied Research Laboratories, Taiwan
C.-C. Kei, National Applied Research Laboratories, Taiwan
C.-Y. Su, National Applied Research Laboratories, Taiwan
W.-C. Chen, National Applied Research Laboratories, Taiwan
Correspondent: Click to Email

Diluted magnetic semiconductors (DMS) have recently attracted considerable attention due to their potential applications for spintronic devices, such as spin-valve transistors, nonvolatile memory, and magneto-optical switches. ZnMnO is one of the most promising DMS materials due to its predicted above room temperature ferromagnetism. In this study, Al2O3 layer was conformally deposited on the surface of polystyrene (PS) nanoshpere by atomic layer deposition (ALD). After removal of PS nanosphere by heating, alumina hollow nanospheres were formed. Then the (1-x)Zn(x)MnO hollow nanosphere were grown by Nd:YAG pulsed laser deposition(PLD). Atomic force microscopy (AFM) and magnetic force microscopy (MFM) were employed to characterize the surface properties of these samples. The high-resolution x-ray diffraction was used to evaluate the crystal quality. The magnetic properties of the (1-x)Zn(x)MnO hollow nanosphere were measured by a superconducting quantum interference device (SQUID) magnetometer. Photoluminescence (PL) spectroscopy and spectrometer were used to characterize the optical properties. The results show that the properties of Mn doped ZnO hollow nanosphere strongly depend on the size of nanosphere.