| AVS 55th International Symposium & Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | D.M. DeVito, Oak Ridge National Laboratory |
| Authors: | D.M. DeVito, Oak Ridge National Laboratory J.S. Neal, Oak Ridge National Laboratory B.L. Armstrong, Oak Ridge National Laboratory M. Hong, University of California - Davis B. Kesanli, Oak Ridge National Laboratory J.O. Ramey, Oak Ridge National Laboratory J.Y. Howe, Oak Ridge National Laboratory X. Yang, West Virginia University N.C. Giles, West Virginia University Z.A. Munir, University of California - Davis L.A. Boatner, Oak Ridge National Laboratory |
| Correspondent: | Click to Email |
N-type doped ZnO is an ideal scintillator for use as an alpha particle detector due to its high light output, chemical stability, and sub-nanosecond decay times. ZnO, being a non-cubic material, has seen little success in producing the highly transparent polycrystalline bodies needed for scintillator applications. In this work, ZnO:Ga and ZnO powders were pressed into high density (>98%) polycrystalline bodies by hot uniaxial pressing and spark plasma sintering. These samples showed both photoluminescence and emission under alpha particle exposure. Investigation of the sample microstructure showed substantial grain growth. Samples also showed a high degree of translucency after post-sintering heat treatments. Additional processing results will also be included.