| AVS 55th International Symposium & Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | G.Y. Jhan, National Dong Hwa University, Taiwan |
| Authors: | G.Y. Jhan, National Dong Hwa University, Taiwan Y.J. Chen, National Dong Hwa University, Taiwan H.Y. Lai, National Dong Hwa University, Taiwan J.H. Du, National Dong Hwa University, Taiwan J.H. Liang, National Dong Hwa University, Taiwan |
| Correspondent: | Click to Email |
MgAl2O4 (111) has lower lattice mismatch than c-plane sapphire with ZnO epilayer, so it is possible for ZnO film deposited on MgAl2O4 to obtain better quality than on c-plane sapphire. However, MgAl2O4 (111) has two kinds of sublattice of oxygen layer. Although surface energies of two kinds of sublattice of oxygen layer are similar, the sublattice constants of oxygen layers are different. Since the difference of oxygen sublattice constant could affect ZnO film epitaxy quality on MgAl2O4 (111), we should control surface of MgAl2O4 (111) to expose the proper oxygen sublattices for ZnO film growth. In this research, we studied influence of H2SO4 and H3PO4 etching of MgAl2O4 (111) substrate on the deposition of ZnO thin film by MOCVD. The chemical etching of MgAl2O4 was performed with H2SO4 and H3PO4 respectively to obtain different surfaces of MgAl2O4 (111). The ZnO film was deposited on pretreated MgAl2O4 (111) at the growth temperature of 350°C. By SEM、XRD and PL analysis, the specimen of H3PO4 etching has better quality than specimen of H2SO4 etching at the growth temperature of about 350°C. These results imply that different surfaces were created by using H3PO4 and H2SO4. We proved that ZnO film has good quality on H3PO4 etched MgAl2O4 (111) substrate.