| AVS 55th International Symposium & Exhibition | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | G.H. Kim, Chungang University, Korea |
| Authors: | G.H. Kim, Chungang University, Korea K.T. Kim, Chungang University, Korea C.I. Kim, Chungang University, Korea Y.K. Yoon, University at Buffalo, the State University of New York |
| Correspondent: | Click to Email |
(Bax,Sr 1-x)TiO3 (BST) ferroelectrics exhibit high dielectric permittivity and have been widely investigated both in films and ceramics. Using BST ferroelectric structures, manufacturing highly integrated memory device is possible. Recently, one dimensional nanostructures, such as nanotube and nanofiber, have been intensively studied because of their unique structure and properties. However, the BST nanotube arrays have not been widely studied yet because of fabrication difficulty and its properties are not reported. The main aim of this work includes the fabrication and investigation of structural BST nanotube arrays prepared using the sol-gel method in an anodized nanoporous aluminum oxide template. The perovskite phase has been obtained as a function of the annealing temperature from 450 to 700 oC for 1h. The crystalline structures of the BST nanotubes arrays have been analyzed by X-ray diffraction. The surface and cross-sectional microstructures of BST nanotubes arrays are examined using scanning electron microscopy and transmission electron microscopy. The electrical P-E curve (hysteresis loop) of the BST nanotube array are illustrated.