|AVS 55th International Symposium & Exhibition|
|Electronic Materials and Processing||Thursday Sessions|
|Session:||Contacts, Interfaces, and Defects in Semiconductors|
|Presenter:||H. Won, The Pennsylvania State University|
|Authors:||H. Won, The Pennsylvania State University
R.F. Willis, The Pennsylvania State University
|Correspondent:||Click to Email|
We report measurements of the sheet conductance of Si(111) 7x7 reconstructed surface and its metallization with Ag-overlayer. The experiment employs a STM-tip point tunneling probe coupled to a second spring-contact electrode to evaluate charge-carrier injection and transport via surface states prepared in-situ in UHV. The measurements distinguish a surface-states contribution, a Schottky diode contribution, and a metallic-overlayers dependence on thickness, ranging from submonolayer coverage to 10 monolayers. The thin film conductance shows a dependence on the interface conductance of the semiconductor, which is a function of the surface electron density.