AVS 55th International Symposium & Exhibition
    Applied Surface Science Tuesday Sessions
       Session AS-TuP

Paper AS-TuP5
Characterization of X-ray Photocathode in Transmission Mode at 3keV

Tuesday, October 21, 2008, 6:30 pm, Room Hall D

Session: Aspects of Surface Analysis Poster Session
Presenter: H. Ikeura-Sekiguchi, National Institute of Advanced Industrial Science and Technology (AIST), Japan
Authors: H. Ikeura-Sekiguchi, National Institute of Advanced Industrial Science and Technology (AIST), Japan
T. Sekiguchi, Japan Atomic Energy Agency (JAEA)
M. Koike, National Institute of Advanced Industrial Science and Technology (AIST), Japan
Correspondent: Click to Email

X-ray photoelectron emission microscope (X-PEEM) combined with synchrotron radiation is one of the most promising techniques for real-time surface spectromicroscopy. When X-PEEM is used as an x-ray detector for a transmission x-ray microscope, information on the subsurface properties of thin samples is obtainable with high spatial resolution. For the purpose of application to X-PEEM imaging in transmission mode, X-ray induced electron emission properties from photocathodes were investigated. Experiments were performed at beamline BL-2 of the AIST synchrotron radiation facility TERAS in Tsukuba. The BL-2 is equipped with an Si(111) double-crystal monochromator. Back-surface secondary electrons were detected using a microchannel plate (MCP, Hamamatsu Photonics K.K.). Photocathode thin layers of Al with higher quality on a kapton film were produced using the helicon plasma sputtering system. Thickness dependence of total electron (mostly secondary electron) emission yields from back-surface of Al film is measured at 3 keV photon energy. Secondary electron escape depth of Al was estimated based on semiempirical equations and suitable photocathode thickness of Al was experimentally evaluated. Capability of the imaging technique using the transmission photocathode will also be discussed.