| AVS 55th International Symposium & Exhibition | |
| Applied Surface Science | Tuesday Sessions |
| Session AS-TuP |
| Session: | Aspects of Surface Analysis Poster Session |
| Presenter: | R.E. Davis, IBM Corp. |
| Authors: | R.E. Davis, IBM Corp. M. Hatzistergos, IBM Corp. B.M. St. Lawrence, IBM Corp. T.L. Tai, IBM Corp. A.G. Domenicucci, IBM Corp. A Madan, IBM Corp. T.L. Pinto, IBM Corp. P. Ronsheim, IBM Corp. Z. Zhu, IBM Corp. A.R. Turansky, IBM Corp. J.R. Holt, IBM Corp. M. Hopstaken, IBM Corp. T.N. Adam, IBM Corp. |
| Correspondent: | Click to Email |
In its continuing quest for higher density and performance, the semiconductor industry, in addition to shrinking circuit dimensions, has also turned to novel engineered materials. This paper will describe one such material, epitaxially grown SiGe, and the significant challenges it has brought both to process engineering as well as micro-analysis. It was noted that the mobility of carriers can be enhanced by the selective local application of stress, either compressive or tensile. One way compressive stress can be achieved for pFETs is by incorporating a controlled amount of Ge into the Si lattice, and has been the focus of much recent activity.1-3 Precise control of this enhanced mobility requires quantitative monitoring of the SiGe, for composition, structure and stress. In addition to the normal process concerns about consistency, uniformity, and throughput, the SiGe deposition process exhibits behavior referred to as “loading effects”. In essence, the composition, structure and deposition rate depend on the overall area of exposed Si, as well as its feature size and immediate vicinity. These requirements for analysis have necessitated the careful application of a variety of micro- and bulk characterization techniques, including AES, SIMS, AFM, RBS, EPMA, Ellipsometry, SEM, TEM, XRD, XRR, and Raman techniques. Results will be presented using the AES, XRD and SIMS techniques for this demanding application.
1 “Design of High Performance PFETs with Strained Si Channel and Laser Anneal”, Z. Luo, Y. Chong1, J. Kim3, N. Rovedo, B. Greene, S. Panda, T. Sato4, J. Holt, D. Chidambarrao, J. Li, R. Davis, A. Madan, A. Turansky, O. Gluschenkov, R. Lindsay2, A. Ajmera, J. Lee1, S. Mishra1, R. Amos, D. Schepis, H. Ng, and K. Rim, IEDM Tech Digest, 495 (2005).
2 “Impact of In-situ C Doping on Implant Damage and Strain Relaxation in Epitaxial SiGe layers on Si”, Jinping Liu,* Anthony Domenicucci,** Anita Madan,** Jinghong Li,** Judson Holt,**, Richard Murphy, Andrew Turansky, Robert E. Davis, Lindsay E. Burns, and John Sudijono*, MRS 2006 Spring Meeting
3 “Systematic Characterization of Pseudomorphic (110) Intrinsic SiGe Epitaxial Films for Hybrid Orientation Technology with Embedded SiGe Source/Drain”, Qiqing (Christine) Ouyang*, Anita Madan, Nancy Klymko, Jinghong Li, Richard Murphy, Horatio Wildman, Robert Davis, Conal Murray*, Judson Holt, Siddhartha Panda, Meikei Ieong and Chun-Yung Sung, MRS Proceedings 913, pp. 13-18 (2006).