| AVS 54th International Symposium | |
| Plasma Science and Technology | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | PS2-WeM1 Measurement of Electron Shading and its Depletion by Ultraviolet Radiation using Scanning Surface Potential Microscopy G.S. Upadhyaya, J.L. Shohet, University of Wisconsin-Madison, J.B. Kruger, Stanford University |
| 8:20am | PS2-WeM2 Surface Reaction Enhancement by UV Irradiation during Si Etching with Chlorine Atom Beam B. Jinnai, Tohoku University, Japan, F. Oda, Y. Morimoto, Ushio Inc., Japan, S. Samukawa, Tohoku University, Japan |
| 8:40am | PS2-WeM3 Vacuum-Ultraviolet Radiation-Induced Charge Depletion in Plasma-Charged SiO2/Si by Electron Photoinjection and Fowler-Nordheim Tunneling G.S. Upadhyaya, J.L. Shohet, University of Wisconsin-Madison |
| 9:00am | PS2-WeM4 The Characteristics of a Neutral Beam Angle using a Low Angle Reflected Neutral Beam Etching System D.H. Lee, S.W. Hwang, J.S. Lee, S.H. Oh, Y.H. Lee, Y.-J. Kim, S.W. Choi, W.-S. Han, Samsung Electronics Co. Ltd., S. Korea |
| 9:20am | PS2-WeM5 Quantitative Characterization of Ions and Si Surface Interactions - Estimation of Plasma-Induced Defect Generation Probability K. Eriguchi, D. Hamada, M. Kamei, H. Fukumoto, K. Ono, Kyoto University, Japan |
| 9:40am | PS2-WeM6 Plasma-Catalytic Removal of Nitrogen Oxides M.M. Morgan, E.R. Fisher, Colorado State University |
| 10:40am | PS2-WeM9 Invited Paper New Insight into Fundamental Ion-Surface Interactions M.J. Gordon, X. Qin, K.P. Giapis, California Institute of Technology |
| 11:20am | PS2-WeM11 Investigating Fundamental Etch Limits: Molecular Dynamics Simulations of Sub-10 nm Feature Fabrication J.J. Végh, D.B. Graves, University of California, Berkeley |
| 11:40am | PS2-WeM12 Fragmentation Dynamics of Energetic Fluorinated Ions on Inert and Reactive Surfaces X. Qin, M.J. Gordon, K.P. Giapis, California Institute of Technology |
| 12:00pm | PS2-WeM13 Optical Second-Harmonic Generation to Study Plasma-Surface Interaction in Silicon Materials Processing J.J.H. Gielis, P.M. Gevers, P.J. van den Oever, A.A.E. Stevens, H.C.W. Beijerinck, M.C.M. van de Sanden, W.M.M. Kessels, Eindhoven University of Technology, The Netherlands |