| AVS 54th International Symposium | |
| Electronic Materials and Processing | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:00am | EM-WeM1 Role of Hydrogen Bonding Environment in Amorphous Silicon Films for Passivation of Crystalline Silicon Based Photovoltaic Devices M.Z. Burrows, U.K. Das, R.L. Opila, R.W. Birkmire, University of Delaware |
| 8:20am | EM-WeM2 Impact of Intrinsic Vacancies on Phase Change and Epitaxial Growth of In2Se3 on Si(111) C.Y. Lu, E.N. Yitamben, T.C. Lovejoy, University of Washington, K.M. Beck, A.G. Joly, Pacific Northwest National Laboratory, M.A. Olmstead, F.S. Ohuchi, University of Washington |
| 8:40am | EM-WeM3 Invited Paper Reliability of Electrical Contacts to Single Crystal SiC R.S. Okojie, NASA Glenn Research Center |
| 9:20am | EM-WeM5 Epitaxial CVD of Metallic HfB2 on SiC Substrates Y. Yang, University of Illinois at Urbana-Champaign, V.M. Torres, Dow Corning Compound Semiconductor, J.R. Abelson, University of Illinois at Urbana-Champaign |
| 9:40am | EM-WeM6 Surface and Grain Boundary Electron Scattering in Encapsulated Cu Thin Films T. Sun, B. Yao, University of Central Florida, V. Kumar, Carnegie Mellon University, A.P. Warren, K.R. Coffey, University of Central Florida, K. Barmak, Carnegie Mellon University |
| 10:40am | EM-WeM9 Microstructural Evolution of Nickel Germanides in the Ni1-xTax/Ge Systems during In-situ Annealing J.W. Lee, J.H. Bae, M.H. Park, H.B. Kang, H. Kim, C.W. Yang, Sungkyunkwan University, Korea |
| 11:00am | EM-WeM10 Probing the Effect of Interaction and Thermal Expansion Mismatch between Ge and Templated Mask on Defects during Selective Molecular Beam Epitaxy of Ge on Si D. Leonhardt, Q. Li, S.M. Han, University of New Mexico |
| 11:20am | EM-WeM11 Silver-Bearing Ohmic Contacts for AlGaN/GaN Heterostructures M.A. Miller, S.E. Mohney, The Pennsylvania State University |
| 11:40am | EM-WeM12 Schottky Barrier Characteristics and Interfacial Reactions of Ir and Ti Gate Metallizations on In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors L. Wang, I. Adesida, University of Illinois at Urbana-Champaign |
| 12:00pm | EM-WeM13 Improvement of AlGaN/GaN HEMT and GaN Schottky Contact Device Performance by Reduction of Epitaxial Film Dislocation Density D.J. Ewing, M.A. Derenge, P.B. Shah, U. Lee, T.S. Zheleva, K.A. Jones, Army Research Lab |