| AVS 54th International Symposium | |
| Thin Film | Friday Sessions |
| Session TF1-FrM |
| Session: | Thin Films for Displays and Flexible Electronics |
| Presenter: | W.-Y. Chen, National Cheng Kung University, Taiwan |
| Authors: | W.-Y. Chen, National Cheng Kung University, Taiwan J.-S. Chen, National Cheng Kung University, Taiwan |
| Correspondent: | Click to Email |
Thin film transistors (TFTs) are the fundamental driving circuits for flat panel displays. In combination with the 'transparent circuit technology', transparent TFTs can increase the brightness and decrease the power consumption of displays. Therefore, oxide semiconductors are investigated as a substitute for the conventional amorphous silicon on TFTs because of their high optical transparency. In this work, we investigate the possibility of using reactive sputtered tin oxide (SnO2) as the active layer in transparent TFTs. The transmittance of as-deposited SnO2 film can reach 90%. Hall measurement shows that the SnO2 film has higher carrier mobility than amorphous silicon. By changing the Ar/O2 flow ratio during sputtering, the resistivity as well as the carrier mobility of SnO2 can be varied. With an adequate preparation condition, the reactive sputtered SnO2 film can lead to good characteristics as the active n-channel layer in transparent TFTs.