Paper TF-ThP7
The Role of Nitrogen Composition in SiO_xN_y as Diffusion-Barrier Film Deposited by NH₃/SiH₄/Ar Plasma Enhanced Chemical Vapor Depositon

Thursday, October 18, 2007, 5:30 pm, Room 4C

For the next generation display devices, flexible display panels formed on plastic substrates are considered and one of the important issues in the flexible displays is the formation of transparent diffusion barrier on the plastic substrates or on the devices which prevents the permeation of water and oxygen to the device. In this study, SiO_xN_y thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) using SiH₄/NH₃/Ar at low temperature (temperature < 50°C) and with biasing the substrate and the effect of substrate biasing and gas mixture on the film properties as a water vapor permeation barrier was investigated. The result showed that with the R ratios (R=[NH₃]/([NH₃]+[SiH₄]) from 0.4 to 0.6, nitrogen composition in the film was the highest and the roughness of the film was the lowest. Also, the water vapor transmission rate was ≤ 10^-3 mg/(m²/day). Consequently, these SiO_xN_y thin films were suitable as diffusion barriers on glass or polymer materials. In this presentation, more detailed material properties of SiO_xN_y thin films measured as a function of bias voltage and gas combination will be discussed.