|AVS 54th International Symposium|
|Thin Film||Thursday Sessions|
|Session:||Aspects of Thin Films Poster Session|
|Presenter:||J.H. Kim, Chungbuk National University, Korea|
|Authors:||J.H. Heo, Chungbuk National University, Korea
J.H. Kim, Chungbuk National University, Korea
|Correspondent:||Click to Email|
Post deposition annealing and alternating current electroluminescence of thin film gallium oxide doped with manganese (Ga2O3:Mn) have been studied. The Ga2O3:Mn films were prepared at room temperature by radio frequency planar magnetron sputtering from a 2 mol% Mn-doped Ga2O3 target in an oxygen-argon mixture atmosphere. The as-deposited Ga2O3:Mn films had an amorphous structure. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses indicated that the Ga2O3:Mn films began to crystallize into a monoclinic β-Ga2O3 phase by the post-deposition anneal at 800°C. The crystallinity of the films was continuously improved as the annealing temperature increased up to 1200°C. The polycrystalline structure was uniformly developed throughout the film by the anneal. The half-stack alternating-current thin-film electroluminescent (ACTFEL) devices were constructed using an inverted single-insulating structure, indium tin oxide (ITO)/Ga2O3:Mn/lead zirconate titanate (PZT)/Au on alumina (Al2O3) substrates. The fabricated ACTFEL devices exhibited an emission peak at around 507 nm in the green range and it was accounted for by the 3d-3d intrashell transition from the 4T1 excited state level to the 6A1 ground-state in divalent Mn ion. The color coordinates of the emission were x=0.197 and y=0.623 in the CIE chromaticity.