Paper TF-ThP5
Annealing and Manganese Activated Electroluminescent Characteristics of Thin Film Gallium Oxide

Thursday, October 18, 2007, 5:30 pm, Room 4C

Post deposition annealing and alternating current electroluminescence of thin film gallium oxide doped with manganese (Ga₂O₃:Mn) have been studied. The Ga₂O₃:Mn films were prepared at room temperature by radio frequency planar magnetron sputtering from a 2 mol% Mn-doped Ga₂O₃ target in an oxygen-argon mixture atmosphere. The as-deposited Ga₂O₃:Mn films had an amorphous structure. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses indicated that the Ga₂O₃:Mn films began to crystallize into a monoclinic β-Ga₂O₃ phase by the post-deposition anneal at 800°C. The crystallinity of the films was continuously improved as the annealing temperature increased up to 1200°C. The polycrystalline structure was uniformly developed throughout the film by the anneal. The half-stack alternating-current thin-film electroluminescent (ACTFEL) devices were constructed using an inverted single-insulating structure, indium tin oxide (ITO)/Ga₂O₃:Mn/lead zirconate titanate (PZT)/Au on alumina (Al₂O₃) substrates. The fabricated ACTFEL devices exhibited an emission peak at around 507 nm in the green range and it was accounted for by the 3d-3d intrashell transition from the ⁴T₁ excited state level to the ⁶A₁ ground-state in divalent Mn ion. The color coordinates of the emission were x=0.197 and y=0.623 in the CIE chromaticity.