| AVS 54th International Symposium | |
| Thin Film | Thursday Sessions |
| Session TF-ThP |
| Session: | Aspects of Thin Films Poster Session |
| Presenter: | W.-S. Lee, Chosun University, Korea |
| Authors: | G.-W. Choi, Chosun University, Korea W.-S. Lee, Chosun University, Korea Y.-J. Seo, Daebul University, Korea S.-W. Park, Chosun University, Korea S.-J. Han, Chosun University, Korea |
| Correspondent: | Click to Email |
Indium tin oxide (ITO) thin films have attracted intensive interest because of their unique properties of good conductivity, high optical transmittance over the visible region and easy patterning ability. Thin films of ITO have found many applications in anti-static coatings, thermal heater, solar cells, flat panel displays, liquid crystal displays, electroluminescent devices, sensors and organic light-emitting diodes. ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive sputtering. In this paper, ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition conditions such as substrate temperature, working pressure, annealing temperature, and deposition time. Carrier concentration and carrier mobility of ITO thin films were measured, the transmittance of them also was done. As O2 flow rate and substrate temperature increased, the transmittance of ITO thin film increased because ITO particles formed coarse and good crystalline. Next, in order to improve the surface quality of ITO thin film, we performed the chemical mechanical polishing (CMP) by change of process parameters, and compared the electrical and optical properties of the polished ITO thin film. The thickness of ITO films was measured by ellipsometer. The electrical resistivity was measured by using the four-point probe method. . The best conditions to polish the surface of ITO thin film (which was used as the anode) smoothly were as follows: platen speed, head speed, polishing time, and slurry flow rate were 60 rpm, 60 rpm, 60 sec, and 60 ml/min, respectively. AFM analysis shows that the thin film of ITO was polished smoothly. This work was supported by a Korea Research Foundation grant (KRF-2006-005-J00902).