Paper TF-ThP11
Transmission Infrared Characterization of Titanium Oxide Thin Films Deposited by Atomic Layer Deposition

Thursday, October 18, 2007, 5:30 pm, Room 4C

Metal oxide thin films have a number of perspective applications in microelectronics and sensor technology. However, there is not enough mechanistic understanding of growth chemistry during film deposition process, especially atomic layer deposition (ALD) process. We have constructed a simple ALD reactor which enables transmission infrared spectroscopy to be performed in situ on a layer-by-layer basis. In this study, ALD of TiO₂ was carried out using alternating exposures of titanium isopropoxide (Ti(OⁱPr)₄) and water (H₂O), separated by an inert gas (e.g., N₂) purge. In situ transmission Fourier transform infrared (FTIR) spectroscopy was used to monitor the sequential surface chemistry during the Ti(OⁱPr)₄ and H₂O exposures during ALD reaction onto the Si(100) surface. The FTIR spectra showed the growth of TiO₂ bulk vibrational modes versus number of ALD cycles. Also ex situ x-ray photoelectron spectroscopy, scanning electron microscopy and transmission electron microscopy were used to investigate the composition and detail structure of the deposited TiO₂ thin film on the Si(100) substrate.