| AVS 54th International Symposium | |
| Advanced Surface Engineering | Monday Sessions |
| Session SE+PS-MoA |
| Session: | Pulsed Plasmas in Surface Engineering |
| Presenter: | J. Emmerlich, RWTH Aachen University, Germany |
| Authors: | J. Emmerlich, RWTH Aachen University, Germany S. Mráz, RWTH Aachen University, Germany R. Snyders, RWTH Aachen University, Germany K. Jiang, RWTH Aachen University, Germany J.M. Schneider, RWTH Aachen University, Germany |
| Correspondent: | Click to Email |
In high power pulsed magnetron sputtering (HPPMS), several kW target power are dissipated during μs pulses resulting in a high degree of ionization of the sputtering gas as well as the sputtered target material.1 A major drawback of this deposition process is reported to be the low deposition rate compared to d.c. magnetron sputtering (dcMS). Self-sputtering, due to a metal-ion dominated plasma later in the pulse, and plasma conductivity may play a large role in the deposition rate loss. However, the high target potential (up to ~2kV) applied during HPPMS influences the sputtering yield induced by both, the sputtering gas and the target ions (self-sputtering). The effect of the energy dependent sputtering yield on the deposition rate is discussed for Cu. Using transport-of-ions-in-matter (TRIM) software, we simulated the sputtering yield for a Cu target bombarded with energetic Ar+ and Cu+ ions for dcMS and HPPMS target potentials. The results show that the deposition rate of HPPMS compared to dcMS based on an energy dependent sputtering yield is in the range of 77% to 43%.
1K. Macák, V. Kouznetsov, J. Schneider, and U. Helmersson, J. Vac. Sci. Technol. A 18, 1533 (2000).