| AVS 54th International Symposium | |
| Nanometer-scale Science and Technology | Tuesday Sessions |
| Session NS-TuM |
| Session: | Imaging of Nanostructures |
| Presenter: | D.S. Ko, Seoul National University, Republic of Korea |
| Authors: | D.S. Ko, Seoul National University, Republic of Korea S.D. Kim, Seoul National University, Republic of Korea X.S. Li, Samsung Advanced Institute of Technology, Republic of Korea K.S. Park, Samsung Advanced Institute of Technology, Republic of Korea Y.K. Kim, Samsung Advanced Institute of Technology, Republic of Korea C.G. Park, National Center for Nanomaterials and Technology, Republic of Korea Y.W. Kim, Seoul National University, Republic of Korea |
| Correspondent: | Click to Email |
In-situ transmission electron microscopy (TEM) became one of the major fields in physics and materials science as the advanced technologies were adopted to observe real-time changes of microstructures in a confined space of TEM.1,2,3 We developed an in-situ TEM holder to investigate the live operation of electronic devices and we present step-by-step manufacturing procedures of nano-manipulator-electrical signal holder applied to investigate the transport of matters in Light Emitting Diode (LED) and Phase-changing Random Access Memory (PRAM). The TEM sample of active electron device was prepared by focused ion beam followed by plasma etching as reported earlier4 to remove the Ga-contamination at the surface. The removal of surface layer with Ga was essential to remove a leakage path of current. As-FIB-prepared LED sample showed illumination only after the plasma etching process. In order to make electrical contact to the samples of electronically active device, tungsten tip was fabricated using electro-chemical polishing technique in 10% NaOH. The tip fabricated was small enough to locate the contact pad with 30-40 nm in apex diameter. The apex radius of commercially available tungsten tip was too big for probing to make electrical contact to the target device. Tungsten probe was mounted on the 4-mm diameter, quadrant piezo tube, which was linked to micrometer for the coarse movement. In-situ observation of intermixing and materials transport in commercially available GaN LED and phase-changing of calcogenide material in PRAM device, is investigated and the recorded.
1C.M. Grimaud and O. Lourie, In Situ Electrical Probing by TEM-STM: instrumentation and applications for nanocharacterization, Microsc. Microanal. 10(suppl 2), 1112 (2004)
2 T. Kizuka et al, Metal-Insulator Transition in Stable One-Dimensional Arrangements of Single gold Atoms, Jpn. J. Appl. Phys. 40 L170 (2001)
3 D. Golberg, et al, In situ electrical probing and bias-mediated manipulation of dielectric nanotubes in a high-resolution transmission electron microscope, Appl. Phys. Lett. 88 123101 (2006)
4D.S. Ko, et al, Effective removal of Ga residue from focused ion beam using a plasma cleaner, Ultramicroscopy 107, 368 (2007).