AVS 54th International Symposium
    MEMS and NEMS Tuesday Sessions
       Session MN-TuP

Paper MN-TuP6
Improvement of Surface Roughness of Cerium Oxide Thin Film by Chemical Mechanical Polishing for Oxygen Gas Sensor

Tuesday, October 16, 2007, 6:00 pm, Room 4C

Session: MEMS and NEMS Poster Session
Presenter: N.-H. Kim, Sungkyunkwan University, Korea
Authors: P.-J. Ko, Chosun University, Korea
Y.-K. Jun, Chosun University, Korea
P.-G. Jung, Chosun University, Korea
N.-H. Kim, Sungkyunkwan University, Korea
W.-S. Lee, Chosun University, Korea
Correspondent: Click to Email

Cerium oxide (CeO2) is one of the most widely used materials for the oxygen gas sensors. Surface roughness of CeO2 thin films must be improved because the electrical and sensing properties of CeO2 thin films are determined by these characteristics. Chemical mechanical polishing (CMP) processing was selected for improving the surface roughness of CeO2 thin films. Surface roughness and within-wafer non-uniformity (WIWNU%) of spin coated CeO2 thin films were examined with a change of CMP process parameters. The optimized process condition, reflected by both the surface roughness and the hillock-free surface with the good uniformity, was obtained. The effects of the improved surface roughness on the sensing property of CeO2 thin films were also confirmed. The improved sensing property of CeO2 thin films for oxygen sensors were obtained after CMP process by the improved surface morphology. Therefore, we conclude that sensing property of CeO2 thin film is strongly dependent on the surface roughness of CeO2 thin films. Acknowledgement: This work was supported by Korea Research Foundation Grant (KRF-2006-005-J00902).