| AVS 54th International Symposium | |
| MEMS and NEMS | Tuesday Sessions |
| Session MN-TuP |
| Session: | MEMS and NEMS Poster Session |
| Presenter: | O. Celik, Rutgers University |
| Authors: | O. Celik, Rutgers University N. Shankar, Rutgers University A.V. Ermakov, Rutgers University L. Goncharova, Rutgers University Q. Jiang, Rutgers University L. Wielunski, Rutgers University E. Garfunkel, Rutgers University X.M. Yan, Qualcomm MEMS Technologies A.L. Londergan, Qualcomm MEMS Technologies E. Gousev, Qualcomm MEMS Technologies |
| Correspondent: | Click to Email |
The controlled etching of micro/nano structures is very important for a variety of technological applications, including MEMS fabrication. XeF2 is an isotropic and selective vapor phase etchant used to etch Si and metals in MEMS and other devices. For better process control and device functioning, it is important to understand the etching mechanism at the molecular level. In this study we have explored the surface and gas phase chemistry of XeF2 etching of metallic films. Down stream mass spectrometry is used to identify the gas phase by-products in the etching process. RBS and MEIS are used to measure the thickness of the films and the depth profile of near-surface species after etching. The etch rate is calculated from film thickness changes. The etched surface composition and chemical state are further investigated by XPS. Based upon the gas phase by-products during etching, surface species and their depth profiles, and the etching rate, a reaction mechanism of XeF2 etching is proposed.