AVS 54th International Symposium | |
Electronic Materials and Processing | Thursday Sessions |
Session EM-ThP |
Session: | Electronic Materials and Processing Poster Session |
Presenter: | K.T. Kim, Chungang University, Korea |
Authors: | K.T. Kim, Chungang University, Korea G.H. Kim, Chungang University, Korea J.C. Woo, Chungang University, Korea C.I. Kim, Chungang University, Korea |
Correspondent: | Click to Email |
In recent years, the continuous downward scaling of dynamic random access memory capacitors, requires exploitation of capacitive devices of advanced topology, i.e. stacked or trenched structures. In choosing the replacement high-k materials for SiO2 for the transistor gate region several challenging factors should be taken into account such as: a) the dielectric-silicon interface quality and stability b) the relation between the dielectric constant and the energy level configurations (energy band gap) c) energy band offsets, which could lead to an increase in the leakage current d) defect density at the interface. Among the many possible candidate high-k (15-30) dielectric materials, HfO2emerging as a promising gate dielectric material, due to its high dielectric constant and superior thermal stability on Si substrates. Moreover, the ALD (atomic layer deposition) method is preferred for obtaining these high quality high-k dielectric layers, because of its excellent thickness controllability and low thermal budget. In the present study, HfO2 thin films were atomic layer deposited from the liquid hafnium precursor TEMA (Hf[N(CH3)(C2H5)] 4) precursor and O3 oxidation and were characterized using angle resolved X-ray photoelectron spectroscopy , scanning transmission electron micrscopy , and electron energy loss spectroscopy .