| AVS 54th International Symposium | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | C.N. Hsiao, National Applied Research Laboratories, Taiwan |
| Authors: | W.C. Chen, National Applied Research Laboratories, Taiwan C.-C. Kei, National Applied Research Laboratories, Taiwan H.C. Pan, National Applied Research Laboratories, Taiwan S.Y. Kuo, Chang Gung University, Taiwan J.S. Chen, National Applied Research Laboratories, Taiwan C.N. Hsiao, National Applied Research Laboratories, Taiwan |
| Correspondent: | Click to Email |
InN nitride films were grown by using a metal-organic molecular beam epitaxy system. Trimethyl-indium and RF radical nitrogen were used as group III and V sources, respectively. Ga-doped ZnO and AlN buffer layers were used to improve the film quality of InN on silicon substrate. The growth rate of InN film can reach 25nm/min by using the Ga-doped ZnO buffer layer. According to X-ray diffraction and field emission transmission electron microscope results, the InN films are polycrystalline wurtzite with (0002) preferred orientation. Compared with the AlN buffer, the Ga-doped ZnO film can improve the film quality of InN. Photoluminescene result suggests that the band gap of InN film is around 0.65eV. Hall effect measurement reveals that the sheet carrier concentrations of InN film is 5 × 1017 cm-2. The growth kinetic of InN films could be controlled by adjusting the III/V ratio, RF plasma power and growth temperature.