| AVS 54th International Symposium | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | G.-W. Choi, Chosun University, Korea |
| Authors: | G.-W. Choi, Chosun University, Korea W.-S. Lee, Chosun University, Korea S.-W. Park, Chosun University, Korea Y.-J. Seo, Daebul University, Korea Y.-K. Lee, Chosun University, Korea |
| Correspondent: | Click to Email |
As a semiconductor material, ZnO has many useful properties such as excellent trasmittance for visible light, very high piezoelectricity and high gas sensitivity. Such properties make them well suited for the realization of many optoelectronic applications including transparent conductive oxides in display devices and solar cells, photodetectors, and transparent thin film transistors. In this paper, The electrical and the optical properties were investigated to find the optimum microstructure of ZnO thin films deposited by RF magnetron sputtering. To achieve high transmittance and low resistivity, we examined the various film deposition conditions such as deposition time, working pressure, annealing temperature, and substrate temperature. Then, electric characteristics, transmittance and surface roughness of ZnO thin films were measured by Hall effect measurement, UV-VIS spectrometer and AFM. Next, in order to improve the surface quality of ZnO thin film, we performed the chemical mechanical polishing (CMP) by change of process parameters, and compared the electrical and optical properties of the polished ZnO thin film. The thickness of ZnO films was measured by a-step. The spectral transmittance of ZnO thin films was measured in the wavelength range 200-900 nm by a UV-VIS spectrometer. This work was supported by a Korea Research Foundation grant (KRF-2006-005-J00902).