| AVS 54th International Symposium | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | D.-Y. Kim, Samsung Electronics, Korea |
| Authors: | H.-J. Yun, Samsung Electronics, Korea D.-Y. Kim, Samsung Electronics, Korea Y.-G. Kwon, Samsung Electronics, Korea B.-D. Kim, Samsung Electronics, Korea Y.-H. Kim, Samsung Electronics, Korea T.-S. Kim, Samsung Electronics, Korea Y.-B. Koh, Samsung Electronics, Korea |
| Correspondent: | Click to Email |
Silicon nitride is useful in semiconductor industry for surface passivation as a hard mask. Recently, even at optimum exposure dose (Eop), it was found that photoresist patterns collapsed on silicon nitride which underwent ashing and stripping due to former step failure. The cause of pattern collapse is thought to be adhesion insufficiency resulted from a large discordance between the surface tension of substrate and that of resist. A polymer which has hydrophilic ester moiety was synthesized, and a resist based on this polymer shows better adhesion to silicon nitride. 42 nm line and space patterns were delineated using 193nm lithography tool without pattern collapse.