| AVS 54th International Symposium | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | Y.-K. Lee, Chosun University, Korea |
| Authors: | Y.-K. Lee, Chosun University, Korea S.-W. Park, Chosun University, Korea S.-J. Han, Chosun University, Korea G.-W. Choi, Chosun University, Korea Y.-J. Seo, Daebul University, Korea W.-S. Lee, Chosun University, Korea |
| Correspondent: | Click to Email |
Chemical mechanical polishing (CMP) is the most commonly used planarization technique in semiconductor process for ULSI applications. As its name indicates, CMP process depending on the chemical interaction of the slurry with polishing wafer and mechanical down force applied to the wafer. Recently, the application of CMP has been especially popular in the fabrication of Copper damascene structures. However, the low-k materials at 65nm and below device structures because of fragile property, requires low down-pressure mechanical polishing for maintaining the structural integrity of under layer during their fabrication. Also, the problems faced by copper CMP process is the lower removal rate due to the low mechanical down force required by the low k dielectric and to reduce dishing and erosion. To solve these problems, in this paper, we studied electrochemical mechanical polishing (ECMP) as an epoch-making technology that uses electrical current and voltage for copper CMP process. In this experiment, 2 x 2 Cu disk of 99.99% pure was used as experimental samples in a standard two-electrode with Cu working electrode (WE), Pt counter electrode (CE). Linear sweep voltammetry (LSV) and cyclic voltammetry (CV) Method were plotted for each of the electrolyte (NaNO3) and concentration level. And then, we investigated that how this chemical affect the process of voltage induced material removal in ECMP of Copper. This work was supported by grant No. (R01-2006-000-11275-0) from the Basic Research Program of the Korea Science & Engineering Foundation and by Korea Research Foundation Grant (KRF-2006-005-J00902).