| AVS 54th International Symposium | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | Y.-K. Jun, Chosun University, Korea |
| Authors: | Y.-K. Jun, Chosun University, Korea P.-G. Jung, Chosun University, Korea P.-J. Ko, Chosun University, Korea N.-H. Kim, Sungkyunkwan University, Korea W.-S. Lee, Chosun University, Korea |
| Correspondent: | Click to Email |
Chemical mechanical polishing (CMP) process was proposed to fabricate the ferroelectric Pb(Zr,Ti)O3 capacitor instead of plasma etching process for the vertical profile without plasma damage in our previous study. Our previous study showed that good removal rate with the excellent surface roughness compared to plasma etching process were obtained by CMP process for the patterning of Pb(Zr,Ti)O3 thin film. The post cleaning process was also one of the very important parameters influenced on ferroelectric properties of Pb(Zr,Ti)O3 thin film capacitor. The ferroelectric properties were degraded without post cleaning process. However, the optimized post cleaning process for Pb(Zr,Ti)O3 thin film was not reported. In this study, the effects on the degradation of Pb(Zr,Ti)O3 thin film capacitors of the contaminations such as slurry residues were investigated. And the exclusive cleaning chemicals for Pb(Zr,Ti)O3 thin film were developed in this work. The improved ferroelectric properties of Pb(Zr,Ti)O3 thin film capacitor were obtained with the optimized post cleaning process after fabrication of Pb(Zr,Ti)O3 thin film capacitor by CMP process. Acknowledgement: This work was supported by Korea Research Foundation Grant (KRF-2006-005-J00902).