AVS 54th International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP20
Differentiating True Tunneling from Defect Dominated One, Using Current-Voltage Curve Fitting

Thursday, October 18, 2007, 5:30 pm, Room 4C

Session: Electronic Materials and Processing Poster Session
Presenter: A. Vilan, Weizmann Institute of Science, Israel
Correspondent: Click to Email

The shapes of current-voltage curves which originate from either true tunneling across the insulating film or from metallic shorts through the film (defects) are extremely similar.1,2 While this problem is known since the 1960’s,3 there is yet no direct solution for it. An evidence for tunneling is received only by complementary observations such as characteristic vibronic features (IETS, molecules)4 or magneto-resistance below Tc (superconductors).2 The uncertainty regarding defect transport means that the nominal junction’s geometry (namely contact area and insulator thickness) is not necessarily relevant. This motivated a search for a simplified modeling of charge transfer which avoids any prerequisite input parameters and relays solely on graphically extracted parameters. In my talk, I will show that the two popular, highly non-linear current-voltage (I-V) relations of inelastic tunneling (Simmons model5) and nonresonant super-exchange (Mujica-Ratner model6) can be reasonably approximated by simple cubic relations of two characteristic parameters: the equilibrium conductance (G0) and the shape factor (ρ).7 Both G0 and ρ depend on barrier height and width while contact area contributes only to G0. Therefore, correlating between G0 and ρ is highly informative in evaluating the actual junction parameters. In case of defect dominated transport, the extracted contact area would be much smaller than the nominal one, providing a direct experimental indication for the quality of the junction. This approach can be extended also to the Fowler-Nordheim relations describing field emission at high bias range. The proposed analysis would be demonstrated on various experimental and simulated I-V’s.

1 Z.S. Zhang and D.A. Rabson, J. Appl. Phys. 95, 557-560 (2004).
2 B.J. Jonsson-Akerman et al., Appl. Phys. Lett. 77, 1870-72 (2000).
3 J.L. Miles and H.O. McMahon, J. Appl. Phys. 32, 1176-1177 (1961).
4 J.G. Kushmerick et al., Nano Lett. 4, 639-642 (2004).
5 J. G. Simmons, J. Appl. Phys. 34, 1793-1803 (1963).
6 V. Mujica and M.A. Ratner, Chemical Physics 264, 365-370 (2001).
7 A. Vilan, J. Phys. Chem. C 111, 4431-4444 (2007).