| AVS 54th International Symposium | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | J. Carrillo, Universidad Autonoma de Puebla, Mexico |
| Authors: | J. Carrillo, Universidad Autonoma de Puebla, Mexico G. Garcia, Universidad Autonoma de Puebla, Mexico M. Melendez, Centro de Investigación y Estudios Avanzados-IPN, Mexico W. Calleja, Instituto Nacional de Astrofisica, Optica y Electronica, Mexico |
| Correspondent: | Click to Email |
The search for a luminescence material compatible with silicon-based integrated circuit processing technology is a need for optoelectronic applications, and has received great attention in recent years. The optical properties of silicon nanocrystals in SiO2 have been studied extensively since visible room temperature photoluminescence (PL) was first observed in such systems. Several models have been suggested in attemps to clarify the origins of the PL properties of indirect-gap group-IV semiconductor nanocrystals. For example, some researchers explain their results using a three-dimension quantum confinement model, while others believe that interface defects and emmiting centers are responsible for PL emission. In this paper, the dependence of silicon nanoclusters embedded in a Si-implanted SiO2 matrix deposited by reactive sputtering and after annealing is presented. Red photoluminescence has been observed at room temperature from deposited films and its intensity exhibits a strong dependence on the temperature and time of annealing. High - resolution transmission electron microscopy, Fourier transform infrared transmission spectra and PL results are used to discuss the emission mechanisms. We acknowledge the partial financial support of VIEP-BUAP through the project 06/EXC/06-G.