AVS 54th International Symposium
    Electronic Materials and Processing Thursday Sessions
       Session EM-ThP

Paper EM-ThP14
Magnetic Field Dependent Electrical Properties of Vertically Grown Ni Single Nanowire

Thursday, October 18, 2007, 5:30 pm, Room 4C

Session: Electronic Materials and Processing Poster Session
Presenter: A.-Y. Koo, Myongji University, Korea
Authors: A.-Y. Koo, Myongji University, Korea
H. Yang, Myongji University, Korea
C.J. Kang, Myongji University, Korea
Y.S. Kim, Myongji University, Korea
J.Y. Cho, Korea University, South Korea
Y.J. Choi, Myongji University, Korea
Y.K. Kim, Korea University, South Korea
Correspondent: Click to Email

Magnetotransport of nickel nanowires has been widely investigated due to its potential application to magnetic memory devices. However, because of the difficulty to make a good electrical interconnects between single nanowire and metal pad, most magnetotransport studies have been performed on bundles of nanowires embedded in a template or a single nanowire with e-beam lithographically patterned metal contact. In order to overcome the averaged-out information of the bundles of nanowire and the complexity in patterning metal pads, we developed a novel and simple method to measure the magnetotransport properties of Ni single nanowire electrodeposited in an AAO template by adopting scanning probe microscopy technique. In addition to the magnetotransport properties, we studied the electrical properties of Ni single nanowire using the Electrostatic Force Microscopy (EFM) and Scanning Capacitance Microscopy (SCM). We will discuss the magnetic field dependent electrical property variation due to the crystallographic structure of Ni nanowire.