| AVS 54th International Symposium | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | S. Kim, Sungkyunkwan University, Korea |
| Authors: | S. Kim, Sungkyunkwan University, Korea K. Kim, Sungkyunkwan University, Korea I. Chung, Sungkyunkwan University, Korea |
| Correspondent: | Click to Email |
We investigated various sizes of magnetic tunneling junction ( MTJ ) cells which are considered as an alternative nonvolatile storage due to its unique characteristics such as high speed, low operation voltage and high endurance. We studied switching field variations in terms of the sizes of sub-micron MTJ cells by measuring the I-V characteristics of MTJ cells and I-H loops, which was obtained by measuring the tunneling current with sweeping a magnetic field. In addition, We obtained magnetic domain images utilizing magnetic force microscope (MFM) for MTJ cells to understand the variation in I-H loop. We found that the switching field of the MTJ cell tends to increase as the size decreases due to the demagnetization field.