| AVS 54th International Symposium | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | M. Milojevic, University of Texas at Dallas |
| Authors: | F.S. Aguirre-Tostado, University of Texas at Dallas M. Milojevic, University of Texas at Dallas S.J. McDonnell, University of Texas at Dallas R.M. Wallace, University of Texas at Dallas |
| Correspondent: | Click to Email |
The use of high-mobility channel materials, such as GaAs and InGaAs in addition to high-κ dielectrics has attracted substantial interest as a means to maintain integrated circuit scaling and performance. For ultra-thin dielectric films, the quality of the high-κ/semiconductor interface plays a crucial role in determining the electrical properties of a device. GaAs surface preparation plays an important part in controlling the interfacial chemistry.1 Previous photoemission studies2,3 have examined the effects of etching GaAs with HCl, HF and NH4OH in a controlled atmosphere (argon,2 nitrogen3). This paper examines the chemistry of the GaAs surface after a NH 4OH-based cleaning procedure, without the use of a controlled atmosphere, for high-k dielectric deposition. In-situ anneals up to 450 ºC promote As-oxide dissociation resulting in the formation of Ga-oxide and As desorption. An in-situ bulk and interface study of sputter deposited LaAlO3 on GaAs is also presented on this surface. This work is supported by the MARCO MSD Focus Center.
1Mikhail V. Lebedev , Thomas Mayer, Wolfram Jaegermann, Surface Science 547 (2003) 171-183.
3M. Rei Vilar, J. El Beghdadi, F. Debontridder, R. Artzi, R. Naaman, A. M. Ferraria, A. M. Botelho do Rego, Surf. Interface Anal. 37 (2005) 673-682.
3Mikhail V. Lebedev, David Ensling, Ralf Hunger, Thomas Mayer, Wolfram Jaegermann, Appl. Surf. Sci. 229 (2004) 226-232.