| AVS 54th International Symposium | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThP |
| Session: | Electronic Materials and Processing Poster Session |
| Presenter: | C. Falcony, CINVESTAV-IPN, Mexico |
| Authors: | S. Carmona, CICATA-IPN, Mexico M. Aguilar-Frutis, CICATA-IPN, Mexico M. Garcia-Hipolito, IIM-UNAM, Mexico J. Guzman, IIM-UNAM, Mexico C. Falcony, CINVESTAV-IPN, Mexico |
| Correspondent: | Click to Email |
Aluminum oxide films deposited by ultrasomic spray pyrolysis in the presence of a mist of H2O-NH4OH show an improvement of the overall electrical characteristics. The films were deposited on (100) silicon wafers at temperatures in the range of 400 to 550 °C. Films 200 to 300 Å thick incorporated in a metal-oxide-semiconductor structure present dielectric constants of 8, interface densities of the order of 5x1010 1/eV-cm2 at midgap and a dielectric strength higher than 2MV/cm for samples deposited at 550°C. The average surface roughness for these films was of the order of 10 Å and the refraction index of about 1.6. Also the IR-transmittance spectra of these films suggest the presence of a silicon oxide interlayer for deposition temperatures above 500 °C.