| AVS 54th International Symposium | |
| Electronic Materials and Processing | Thursday Sessions |
| Session EM-ThM |
| Session: | Zinc Oxide |
| Presenter: | O. Bamiduro, Norfolk State University |
| Authors: | O. Bamiduro, Norfolk State University A.K. Pradhan, Norfolk State University |
| Correspondent: | Click to Email |
Recently, transparent conductive oxide electrode, such as Ga or Al-doped ZnO, has attracted much attention not only as a powerful candidate material generally used for InSnO2 (ITO) transparent electrodes, but also has a potential to replace ITO due to low cost, non-toxicity, and high stability in H2 plasma atmosphere with good electrical and optical properties. Here we report on the metal-like conductivity in highly crystalline transparent (>85% in the visible region) Al:ZnO films grown on sapphire and glass substrates by the pulsed-laser deposition technique. Crystalline quality, surface morphology were studied on both types of films. Temperature dependent resistivity measurements of the films grown on sapphire and glass show metal-like conductivity with electrical resistivity, ~0.17 mOhm-cm and ~0.39 mOhm-cm, respectively, at room-temperature followed by either residual conductivity or a metal-semiconductor transition at low temperature due to the localization effect caused by the defects.