| AVS 54th International Symposium | |
| Applied Surface Science | Tuesday Sessions |
| Session AS-TuA |
| Session: | 3-Dimensional Characterization |
| Presenter: | N. Urushihara, ULVAC-PHI, Inc., Japan |
| Authors: | N. Urushihara, ULVAC-PHI, Inc., Japan S. Iida, ULVAC-PHI, Inc., Japan N. Sanada, ULVAC-PHI, Inc., Japan D.F. Paul, Physical Electronics S. Bryan, Physical Electronics M. Suzuki, ULVAC-PHI, Inc., Japan Y. Nakajima, Toyo University, Japan T. Hanajiri, Toyo University, Japan |
| Correspondent: | Click to Email |
Auger electron spectroscopy (AES) is widely used for observation of two-dimensional map (surface elemental distribution) with a high spatial resolution as well as in-depth elemental distribution. An elemental map is generally obtained at an as-received surface or a sputtered surface. Though it is easy to visually recognize elemental distribution in a plane surface, it is difficult to display it three-dimensionally. On the other hand, an energy dispersal spectrum is not stored at each pixel of an elemental map in AES, and it leads a difficulty to investigate spectral shapes at specified points in an elemental map. In order to solve the former issue we have tried to acquire a three-dimensional elemental map and for the latter issue we have studied to extract an energy dispersal spectrum from successive two-dimensional images at fixed kinetic energies. Specimens used were two kinds of SOI (Silicon on insulator) in the study of 3D image acquiring and a part of sputtered crater at the interface region of a silicon dioxide layer on silicon substrate in the study of spectrum extraction from 2D elemental maps. The interface regions were ion-sputtered at the interval of 0.5nm and intensity distributions of Si LVV and O KLL were mapped at a respective depth with 256 x 256 pixels. One can easily recognize three-dimensional features at the interface regions, seeing successive display of 2D maps. It is clearly seen that silicon oxide is formed island structure for the interface in one of the specimens. For the second issue, two-dimensional signal intensities were stored at the region located adjacent to the interface of SiO2 and Si on a graded sputtered surface. Maps consisted of 64 x 64 pixels and imaged signal intensities were defined as raw intensities including background components. The maps were obtained in the energy ranges of 77 eV to 100 eV for Si LVV with an energy step of 3 eV. At every pixel point energy dispersal spectra were extracted from the 9 maps obtained at the fixed energy. It is obviously distinguished for extracted Si LVV spectra for silicon elemental component and oxide component. All of extracted spectra were processed with linear least square (LLS) method, resulting in separation of elemental and oxide components. In the presentation, results from other material systems for both issues will be demonstrated.