AVS 66th International Symposium & Exhibition
    Electronic Materials and Photonics Division Tuesday Sessions

Session EM+OX+TF-TuA
Nikolaus Dietz Memorial Session: Wide and Ultra-wide Band Gap Materials and Devices

Tuesday, October 22, 2019, 2:20 pm, Room A214
Moderators: Seth King, University of Wisconsin - La Crosse, David Aspnes, North Carolina State University


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

2:20pm EM+OX+TF-TuA1 Invited Paper
Nitride-Based Semiconducting Materials: A Long Pathway to Advanced Nuclear Detection Capabilities
Vincent Woods, L. Hubbard, Pacific Northwest National Laboratory, Z. Sitar, North Carolina State University, A.Y. Kozhanov, Georgia State University
3:20pm EM+OX+TF-TuA4
Low Temperature Growth of InN by Atomic Layer Epitaxy
Charles R. Eddy, Jr., U.S. Naval Research Laboratory, S.G. Rosenberg, J.M. Woodward, American Society for Engineering Education (residing at U.S. Naval Research Laboratory), K.F. Ludwig, Boston University, N. Nepal, U.S. Naval Research Laboratory
4:20pm EM+OX+TF-TuA7
Stochiometry- and Orientation-Dependent Native Point Defects of MOCVD-Grown ZnGeN2 Films
Micah Haseman, D. Ramdin, R. Karim, The Ohio State University, D. Jayatunga, Case Western Reserve University, H. Zhao, The Ohio State University, K. Kash, Case Western Reserve University, L.J. Brillson, The Ohio State University
4:40pm EM+OX+TF-TuA8
Low-temperature Growth of Wide Bandgap Nitride and Oxide Thin Films via Plasma-assisted Atomic Layer Deposition: Influence of rf-plasma Source and Plasma Power
Necmi Biyikli, S. Ilhom, A. Mohammad, D. Shukla, University of Connecticut
5:00pm EM+OX+TF-TuA9 Invited Paper
Wide Bandgap Dilute Magnetic Semiconductors for Room Temperature Spintronic Applications
V.G. Saravade, A. Ghods, Missouri University of Science and Technology, Rolla, MO, USA, N. Ben Sedrine, Universidade de Aveiro, Portugal, C. Zhou, Ian Ferguson, Missouri University of Science and Technology
5:40pm EM+OX+TF-TuA11
Processing and Characterization of Schottky and Ohmic contacts on (100) β-Ga2O3
Luke Lyle, K. Jiang, E. Favela, D. Moody, T. Lin, P. Chung, Carnegie Mellon University, K. Das, North Carolina State University, Z. Galazka, A. Popp, G. Wagner, Leibniz-Institut für Kristallzüchtung, Germany, L.M. Porter, Carnegie Mellon University
6:00pm EM+OX+TF-TuA12
III-Nitrides: Enabling Applications with Wide to Ultra-Wide Bandgap Materials and Devices
Erica Douglas, A.G. Baca, B.A. Klein, A.A. Allerman, A.M. Armstrong, A. Colon, C.A. Stephenson, R.J. Kaplar, Sandia National Laboratories